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MTI Corporation - IBDS (Page 2)

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MTI Corporation - IBDS
Specifications
Main Chamber
·
18" electro-polished stainless steel chamber
·
2 view ports and 5 feedthrough flanges
·
High speed cryogenic pump
Wafer Exchange Chamber
·
8" Gate Valve
·
8" electro-polished chamber
·
Molecular turbo-pump
Carrousel system
·
Five 3"-targets
·
Motor-driven rotation
·
Water cooling
Ion Beam Sputtering Source
·
3 cm RF ion beam source and controller
·
Adjustable distance to target
Accessories
·
Two ion vacuum gauges and a controller
·
Thickness monitor
·
4" resistive heater for up to 900
o
C
·
Eurothermal temperature controller
Advantages over PLD
·
Minimal contamination in UHV
·
Low deposition temperature
·
High quality metal films
·
High quality compound films
·
Smooth surface morphology
·
Large area uniformity
·
In-situ multilayer structures
·
Reactive deposition
Applications
·
Materials R&D in deposition of a variety of
metal and metal compound films
·
·
In-situ deposition of multilayer structures
·
Metallization for device application
·
Demonstrated success in High-K dielectrics,
Ferroelectrics, GMR, Optical coating, and
Metal electrodes like Pt, Ge, etc.
For more information,
please contact:
Mr. Carson
Huang,
MTI Corporation
532 Jacuzzi Street, Bldg. 3-H, Richmond, CA 94804,
Tel. 510-525-3070, Fax. 510-525-4728, E-mail
mti@mticrystal.com
PVD IBSD
Surface roughness comparison between PVD and IBSD
after 5Ĺ deposition of Mo.
(001) (BaSr)TiO
3
expitaxialy grown on (100)LaAlO
3
single crystal substrate at 650
o
C by IBSD system
IBSD deposition Chamber
(002)
LaAlO
3
(002)
BSTO
(001)
BSTO
(002)
LaAlO
3

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